- 您现在的位置：买卖IC网 > Sheet目录345 > MT48H8M16LFB4-75 IT:K TR (Micron Technology Inc)IC SDRAM 128MBIT 133MHZ 54VFBGA
128Mb: x16 Mobile SDRAM
Timing Diagrams
Figure 33:
Power-Down Mode
CLK
T0
tCK
T1
tCL
tCKS
T2
tCH
( (
) )
( (
) )
Tn + 1
t CKS
Tn + 2
CKE
tCKS
tCKH
( (
) )
COMMAND
tCMS tCM H
PRECHARGE
NOP
NOP
( (
) )
( (
) )
NOP
ACTIVE
DQM
( (
) )
( (
) )
A0–A9, A11
( (
) )
( (
) )
ROW
A10
BA0, BA1
DQ
ALL BANKS
SINGLE BANK
t AS
tAH
BANK(S)
High-Z
Two clock cycles
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
Input buffers gated off while in
ROW
BANK
power-down mode
Precharge all
active banks
All banks idle, enter
power-down mode
Exit power-down mode
All banks idle
DON’T CARE
Notes:
1. Violating refresh requirements during power-down may result in a loss of data.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
47
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MTC100-JA2-P34
CONTACT INSERT PIN
MX841BE
IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR
IC LED DRIVER HIGH BRIGHT 8-SOIC
MXN12FB12F
MOTOR BRUSHED DC 12V 2922RPM
MXN13FB08B1
MOTOR BRUSHED DC 8V 4714RPM
N01L63W2AB25I
IC SRAM ASYNC 1MBIT ULP 48-BGA
N01L63W3AB25I
IC SRAM 1MBIT 3V LP 48-BGA
N01L83W2AN5I
IC SRAM 1MB ASYNC CMOS 3STSOP-I
相关代理商/技术参数
MT48H8M16LFB4-8
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR
功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘